. Electronic Components Datasheets 2n6661 free download

File name 2n6661.pdf

Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown The Supertex 2N6661 is an enhancement-mode (normally- Low power drive requirement off) transistor that utilizes a vertical DMOS structure Ease of paralleling and Supertex's well-proven silicon-gate manufacturing process. This combination produces a device with the Low CISS and fast switching speeds power handling capabilities of bipolar transistors, and the Excellent thermal stability high input impedance and positive temperature coefficient Integral source-drain diode inherent in MOS devices. Characteristic of all MOS High input impedance and high gain structures, this device is free from thermal runaway and Hi-Rel processing available thermally-induced secondary breakdown. Applications Supertex's vertical DMOS FETs are ideally suited to a Motor controls wide range of switching and amplifying applications where Converters very low threshold voltage, high breakdown voltage, high Amplifiers input impedance, low input capacitance, and fast switching Switches speeds are desired. Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information BVDSS/BVDGS RDS(ON) ID(ON) Device Package Option